advanced power dual n-channel enhancement electronics corp. mode power mosfet lower on-resistance bv dss 60v simple drive requirement r ds(on) 20.5m fast switching characteristic i d 7.6a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 201501123 1 AP9976GM-HF rating halogen-free product 60 + 20 7.6 parameter drain-source voltage gate-source voltage drain current, v gs @ 10v 3 -55 to 150 drain current, v gs @ 10v 3 6 pulsed drain current 1 40 storage temperature range 2 -55 to 150 thermal data parameter total power dissipation operating junction temperature range s1 g1 s2 g2 d1 d1 d2 d2 g2 d2 s2 g1 d1 s1 ap9976 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 20.5 m v gs =4.5v, i d =4a - - 38 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 5.9 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua drain-source leakage current (t j =70 o c) v ds =48v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =6a - 30 50 nc q gs gate-source charge v ds =48v - 4.5 - nc q gd gate-drain ("miller") charge v gs =10v - 10 - nc t d(on) turn-on delay time v ds =30v - 9 - ns t r rise time i d =1a - 6.3 - ns t d(off) turn-off delay time r g =3.3 - 28 - ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 1320 2100 pf c oss output capacitance v ds =25v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 29 - ns q rr reverse recovery charge di/dt=100a/s - 35 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. 2 AP9976GM-HF
AP9976GM-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) v g = 4.0 v 10v 7.0 v 6.0 v 5.0 v t a =25 o c 0 20 40 60 80 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0 v 6 .0 v 5.0 v v g = 4 .0 v 12 16 20 24 28 32 36 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 4 a t a =25 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =10v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
AP9976GM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristic s fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 0 10 20 30 40 q g , total gate charge (nc) v gs , gate to source voltage (v) i d = 6 a v ds = 30 v v ds =36v v ds =48v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =135 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
marking information 5 AP9976GM-HF 9976gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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